CMOS芯片
宽带
噪声系数
电气工程
放大器
低噪声放大器
WiMAX公司
功勋
电子工程
炸薯条
物理
电信
工程类
计算机科学
光电子学
无线
作者
Ahmed Amer,Emad Hegazi,Hani Ragai
出处
期刊:IEEE Transactions on Circuits and Systems Ii: Analog and Digital Signal Processing
[Institute of Electrical and Electronics Engineers]
日期:2007-01-01
卷期号:54 (1): 4-8
被引量:118
标识
DOI:10.1109/tcsii.2006.884113
摘要
In this brief, the design of a low-power inductorless wideband low-noise amplifier (LNA) for worldwide interoperability for microwave access covering the frequency range from 0.1 to 3.8 GHz using 0.13-mum CMOS is described. The core consumes 1.9 mW from a 1.2-V supply. The chip performance achieves S 11 below -10 dB across the entire band and a minimum noise figure of 2.55 dB. The simulated third-order input intercept point is -2.7 dBm. The voltage gain reaches a peak of 11.2 dB in-band with an upper 3-dB frequency of 3.8 GHz, which can be extended to reach 6.2 GHz using shunt inductive peaking. A figure of merit is devised to compare the proposed designs to recently published wideband CMOS LNAs
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