Comparative Study of Silicon-Based Ultraviolet Photodetectors
光电探测器
硅
光电子学
紫外线
材料科学
半导体
探测器
光学
物理
作者
Lei Shi,Stoyan Nihtianov
出处
期刊:IEEE Sensors Journal [Institute of Electrical and Electronics Engineers] 日期:2012-04-11卷期号:12 (7): 2453-2459被引量:151
标识
DOI:10.1109/jsen.2012.2192103
摘要
This review article presents a comparative study of different silicon-based ultraviolet (UV) photodetector technologies. After a brief introduction and classification of UV photodetectors, a general comparison is made between the two most popular UV-detector solid-state materials: silicon and wide-band gap semiconductors (diamond, SiC, III-nitrides, and some III-V compounds). Particularly, the advantages of the Si-based technologies are discussed. Further in this paper, the analyses are restricted to silicon UV photodetectors. The theoretically attainable sensitivity in the UV spectral range of Si-based photodetectors is discussed. Different device structures and their working principle are shortly reviewed, followed by a comparison of the state-of-the-art Si-based UV photodetectors. By linking the device structure to the reported optical performance, the advantages and drawbacks of different structures are detailed. Finally, a number of key factors for designing high performance Si-based photodetectors are proposed.