材料科学
薄膜晶体管
有机半导体
活动层
光电子学
半导体
聚合物
晶体管
阈值电压
薄膜
绝缘体(电)
电子迁移率
图层(电子)
复合材料
电压
纳米技术
电气工程
工程类
作者
Jiyoul Lee,Ji Young Jung,Do Hwan Kim,Jooyoung Kim,Bang‐Lin Lee,Jeong‐Il Park,Jong Won Chung,Joon Seok Park,Bonwon Koo,Yong Jin,Sangyoon Lee
摘要
We report on an enhanced electrical stability of organic thin-film transistors (OTFTs), where an organic semiconductor (poly(didodecylquaterthiophene-alt-didodecylbithiazole) (PQTBTz-C12)) and a polymer insulator (poly(methyl methacrylate) (PMMA)) blended film were used as the active layer, in comparison with a single PQTBTz-C12 OTFT. While both devices exhibit similar electrical performance in terms of mobility and ON/OFF ratios, the blended device is less susceptible to OFF-bias stress. It is suggested that the carboxyl groups of PMMA in the blend may act as suppressors with regards to hole accumulation in the channel, and thus, the PQTBTz-C12/PMMA blend based OTFTs exhibit delayed threshold voltage shifts under OFF-bias stress.
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