硅烷
微晶
氢
太阳能电池
沉积(地质)
等离子体增强化学气相沉积
非晶硅
化学气相沉积
停留时间(流体动力学)
分析化学(期刊)
化学
体积流量
硅
材料科学
化学工程
晶体硅
纳米技术
光电子学
物理
环境化学
复合材料
热力学
结晶学
有机化学
古生物学
岩土工程
沉积物
工程类
生物
作者
T. Roschek,Bernd Rech,J. Müller,R. Schmitz,H. Wagner
标识
DOI:10.1016/j.tsf.2003.10.128
摘要
In this paper we study the influence of total gas flow on solar cell performance and deposition rate of microcrystalline silicon solar cells prepared by plasma enhanced chemical vapor deposition at 13.56-MHz excitation frequency. By changing the total gas flow the transition between amorphous and microcrystalline growth can be systematically varied. Over a wide range of total gas flows, solar cell efficiencies between 7 and 9% could be realized. The cells at low total gas flows were prepared at increased silane concentrations and reduced hydrogen flows. The results are interpreted in terms of gas utilization and gas residence time in the plasma space. Furthermore, a new technique for the deposition of μc-Si:H is described which produces μc-Si:H suitable for high efficiency solar cells with only very low hydrogen supply. The best solar cell prepared by this method had an efficiency of 7.3%.
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