Influence of excess Ba concentration on the dielectric nonlinearity in Mn and V-doped BaTiO3 multi layer ceramic capacitors

电介质 材料科学 兴奋剂 极化(电化学) 凝聚态物理 化学计量学 分析化学(期刊) 饱和(图论) 陶瓷 陶瓷电容器 电容器 复合材料 化学 光电子学 电压 物理 数学 物理化学 色谱法 组合数学 量子力学 有机化学
作者
Seok‐Hyun Yoon,Sun-Jung Kim,Sang-Hyuk Kim,Doo-Young Kim
出处
期刊:Journal of Applied Physics [American Institute of Physics]
卷期号:114 (22) 被引量:23
标识
DOI:10.1063/1.4844575
摘要

The effect of excess Ba concentration on the dielectric nonlinearity was investigated in Mn and V-doped BaTiO3 multi layer ceramic capacitors (MLCC) under the same grain size condition, which was described by the Preisach model utilizing the first order reversal curve (FORC) distribution. The high-field dielectric constant and its ac field dependence dramatically changed increasing to a maximum and then decreasing with the increase of Ba concentration. The saturation polarization which scales to the magnitude of spontaneous polarization also showed similar behavior. These results indicate that the dependence of the dielectric constant on the Ba concentration is associated with the variation of both domain wall contribution and the magnitude of the spontaneous polarization, which could be correlated with the same dependence on the Ba concentration of the reversible FORC distribution at zero bias and the irreversible FORC distribution near origin. In the corresponding bulk specimens of the dielectrics of MLCC, almost the same amount of the Ba2TiSi2O8 second phases were detected irrespective of Ba concentration, which shows that the excess Ba incorporate into BaTiO3. Thus, low and high Ba concentration corresponds to Ba-deficient and Ba-rich or Ti-deficient BaTiO3, respectively, which results in a small spontaneous polarization and low domain wall density. The intermediate Ba concentration for the maximum dielectric constant is supposed to be near stoichiometric condition in the ABO3 structure corresponding to large spontaneous polarization and high domain wall density. The excess Ba concentration and its resultant A/B stoichiometry is a crucial factor controlling dielectric properties.

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