晶体管
缩放比例
MOSFET
有可能
三维集成电路
计算机科学
电子工程
比例(比率)
集成电路
电气工程
工程类
电压
物理
几何学
量子力学
心理治疗师
数学
心理学
作者
M. Vinet,P. Batude,C. Fenouillet-Béranger,Fabien Clermidy,Laurent Brunet,O. Rozeau,JM Hartmannn,Olivier Billoint,G. Cibrario,B. Prévitali,C. Tabone,B. Sklénard,Ogun Turkyilmaz,F. Ponthenier,N. Rambal,M-P. Samson,F. Deprat,Victor Lu,L. Pasini,Sébastien Thuries,Hossam Sarhan,J-E. Michallet,O. Faynot
标识
DOI:10.1109/s3s.2014.7028194
摘要
Monolithic or sequential 3D Integration is a powerful technological enabler for actual 3D IC design as the stacked layers can be connected at the transistor scale. This paper reviews the opportunities brought by M3DI and highlights the applications benefiting from this small 3D contact pitch. It also presents the technological challenges of this concept and offers a general overview of the potential solutions to obtain a high performance low temperature top transistor while keeping bottom MOSFET integrity.
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