硅
微晶硅
硅烷
材料科学
退火(玻璃)
等离子体
微晶
基质(水族馆)
结晶度
化学工程
分析化学(期刊)
化学
复合材料
结晶学
晶体硅
光电子学
非晶硅
物理
量子力学
工程类
海洋学
色谱法
地质学
标识
DOI:10.1016/s0040-6090(98)01165-1
摘要
Three models proposed for the growth mechanism of hydrogenated microcrystalline silicon films (μc-Si:H) from reactive (silane and hydrogen mixture) plasmas are reviewed. The `etching model' is discussed using experimentally obtained relationship between radical generation rate in plasmas and growth rate of films. The `chemical annealing model' is investigated through the growth of films using a layer-by-layer method with and without cathode shutter. Substrate-temperature dependence of crystallinity of the resulting films and initial growth behavior of silicon films on atomically flat GaAs substrate clearly support the ‘surface diffusion model’.
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