Impact of insulating layer thickness variation on Igzo-based thin-film transistor performance

Abstract This paper highlights the thin film transistors used in the latest applications and devices. The working principle of thin film transistors with various device structures can be used to fabricate thin film transistors. Progress in the latest materials that are being used in applications like LCDs, sensors, RFID tags, Displays, etc The remarkable characteristics of Indium-Gallium-Zinc Oxide (IGZO) thin films, for instance, their transparency and high mobility, have generated significant interest in the application part of Thin-Film Transistors (TFTs). Simulating the functioning of a-IGZO TFTs over Silvaco [Atlas] TCAD Tool, four distinct insulators [SiO 2 , Si 3 N 4 , HfO 2 , and Al 2 O 3 ] are taken into consideration by adjusting insulator thicknesses and measuring the overall current density.