Examination of nonideal film growth in batch atomic layer deposition for plasma-resistant coatings

原子层沉积 等离子体 图层(电子) 沉积(地质) 材料科学 逐层 化学工程 纳米技术 物理 地质学 工程类 沉积物 量子力学 古生物学
作者
Lanxin Guo,Yixian Wang,Zifan Pang,Xin Li Han,Yafeng Wang,Lipei Peng,Xin Gao,Chunlei Pei,Tuo Wang,Jinlong Gong
出处
期刊:Journal of vacuum science & technology [American Institute of Physics]
卷期号:42 (6)
标识
DOI:10.1116/6.0003777
摘要

Atomic layer deposition (ALD) can be used to fabricate protective coatings including moisture barrier layers for organic light emitting diodes, anticorrosion layers for photoelectrodes, and plasma-resistant coating for semiconductor manufacturing equipment, which necessitates the deposition of large and thick ALD films via batch ALD. However, batch ALD for the fabrication of large-area and thick coatings exhibits nonideal film growth, a phenomenon that cannot solely be explained by transient concentration distribution within the deposition chamber. This paper describes the application of precursor “exposure” (in the unit of Langmuir, or Pa s), defined as the integral of concentration over time, as a metric to assess the growth per cycle (GPC) distribution under nonideal ALD conditions, demonstrating that the local GPC correlates well with the cumulative precursor exposure at that site. Consequently, this measure can effectively predict the nonuniformity (NU) distribution of film thickness and facilitate the determination of optimal operating conditions that ensure maximal uniformity of exposure. Under this condition, the intrafilm NU of ALD-grown Al2O3 film (nominal thickness 300 nm) was reduced to 1.2%, and the interfilm NU is diminished to as low as 3.3%. These values represent reductions of 40% and 45%, respectively, compared to the NU levels observed under nonideal conditions (insufficient trimethylaluminum, TMA exposure downstream). The plasma etch rate of ALD-deposited films is merely 4.3 nm/min, representing a reduction of one-half compared to films deposited under nonideal conditions (9.8 nm/min) with overload TMA exposure downstream leading to chemical vapor deposition-like reactions.
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