铁电性
材料科学
多铁性
凝聚态物理
平面(几何)
电介质
物理
几何学
数学
量子力学
作者
Xue‐Zeng Lu,Hui-Min Zhang,Ying Zhou,Tong Zhu,Hongjun Xiang,Shuai Dong,Hiroshi Kageyama,James M. Rondinelli
出处
期刊:Science Advances
[American Association for the Advancement of Science]
日期:2023-11-22
卷期号:9 (47)
被引量:4
标识
DOI:10.1126/sciadv.adi0138
摘要
Thin-film ferroelectrics have been pursued for capacitive and nonvolatile memory devices. They rely on polarizations that are oriented in an out-of-plane direction to facilitate integration and addressability with complementary metal-oxide semiconductor architectures. The internal depolarization field, however, formed by surface charges can suppress the out-of-plane polarization in ultrathin ferroelectric films that could otherwise exhibit lower coercive fields and operate with lower power. Here, we unveil stabilization of a polar longitudinal optical (LO) mode in the
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