EUV APSM mask prospects and challenges

The high numerical aperture EUV exposure systems aim to target a 16-nm pitch to extend Moore's law throughout the next decade. However, thinner photoresist layers and worsened stochastic effects due to photons hitting the wafer at a shallower angle is a major concern. Furthermore, the projection optics utilize an anisotropic reduction factor, which remains an open issue, requiring a dual "half-field" mask exposure sequence or a 12-inch mask for each high-NA EUV layer. Therefore, the use of attenuated phase-shift masks (APSM) to extend 0.33NA to a 28-nm pitch becomes relevant. We will discuss the prospects on optical properties refractive index (n,k) optimization with material selection, feasibility of achieving a 28-nm pitch, 3D effect mitigation and the impact of mask tonality (dark tone vs clear tone). Finally, the challenges on the needs of new APSM materials that meet the requirements of high temp thermal stability, durability under mask clean solution, its dry etching characteristics, the corresponding repair process will be addressed and the experimental results on the Ru-based candidates will be shown.