磁电阻
拓扑绝缘体
材料科学
凝聚态物理
兴奋剂
弱局部化
化学气相沉积
表面状态
薄膜
纳米技术
光电子学
磁场
几何学
曲面(拓扑)
物理
数学
量子力学
作者
Mingze Li,Zhenhua Wang,Xudong Shi,Tingting Li,Xuan Gao,Zhidong Zhang
标识
DOI:10.1016/j.jssc.2023.124315
摘要
We report the electrical and magnetic transport behavior in vertical Cu-doped Bi2Se3 nanoplate films prepared by the chemical vapor deposition method. In vertical Cu-doped Bi2Se3 nanoplate films, the topological surface states are tuned by both the large surface-to-bulk ratio and the Cu doping. Due to their high specific surface area, the magnetoresistance of the vertical undoped Bi2Se3 nanoplate film exhibits a weak antilocalization effect, and it indicates that the surface state properties are greatly enhanced. In vertical Cu-doped Bi2Se3 nanoplate films, the electron doping are inhibited, and the carrier type is changed from n-type to p-type. The observed linear magnetoresistance is attributed to have a quantum origin from the topological surface states. When the Cu concentration reaches 1.73 at.% in vertical Bi2Se3 nanoplate film, the linear magnetoresistance can be maintained up to 100 K. Meanwhile, these vertical nanoplate films exhibit the 3D magnetotransport property. Thus, using the same material system with a broad range of carrier density and type, our work shows the transition from a weak-antilocalization to linear magnetoresistance in nanostructured topological insulator Bi2Se3 films with an unusual morphology where the nanoplates are vertically aligned to increase the surface area.
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