材料科学
非易失性存储器
光电子学
晶体管
异质结
计算机科学
和大门
瓶颈
突触
电气工程
逻辑门
电压
嵌入式系统
工程类
神经科学
生物
作者
Wei Li,Jiaying Li,Yuhua Chen,Z. Chen,Weilin Li,Zhuowen Wang,Tianhui Mu,Zhao Chen,Rui Yang,Zhaojing Meng,Yucheng Wang,Li Feng,S. H. Wang
出处
期刊:ACS applied electronic materials
[American Chemical Society]
日期:2023-07-27
卷期号:5 (8): 4354-4362
被引量:4
标识
DOI:10.1021/acsaelm.3c00595
摘要
With the advent of post-Moore era, the development of memory devices based on bulk materials gradually entered the bottleneck period. Two-dimensional (2D) materials have received much attention due to their excellent optoelectronic and mechanical properties. Also, floating-gate devices based on 2D van der Waals heterostructures have drawn widespread attention in virtue of their great potential for nonvolatile memory. In this paper, a floating-gate device based on a MoS2/BN/graphene heterostructure was fabricated and its electrical storage performance and synaptic function were investigated. Finally, the device obtains a switching ratio of close to ∼105, a large storage window of 107.8 V under a sweeping range of ±60 V, good endurance after 1000 cycles, and charge retention capability above 1500 s. In addition, the device can be used as an artificial synapse to simulate a basic synaptic function and achieve a more linear and symmetrical long-term potentiation and long-term depression profiles. At the same time, the constructed convolutional neural network using this device reaches a high recognition accuracy of 95.5% for handwritten numerals after 1000 times training. These results demonstrate the great potential of 2D material floating-gate devices for nonvolatile memory and neuromorphic computing, which pave the way for the development of next-generation memory devices.
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