Improvement of Charge Kinetics of Mos2 Nano-Petal Based Schottky Device by Incorporation of W: A Comparative Study of Structural, Optical, and Electrical Properties

Molybdenum Tungsten Di-Sulphide is a semiconducting composite of transition metal dichalcogenide materials that has enormous tunable structural, optical, and electrical attributes. In this research, we have performed the hydrothermal synthesization of Mo1-xWxS2 nanocomposites with different molar concentration of tungsten (i.e. x=0, 0.1, 0.2, 0.3) and fabricated Al/ Mo1-xWxS2/ITO structured Schottky Barrier diodes. Characterization of their structural, optical, and charge transport attributes are compared and the diode parameters were analyzed. The calculated mobility and transit time for the Mo0.8W0.2S2 device are 5.65×10-4 m2 V−1 s−1 and 1.59 ns respectively which are better than the rest of the devices. Dramatic conductivity enhancement for the Mo0.8W0.2S2-based Schottky device is observed. As a result, this work not only investigates Al/MoWS2 interface in detail but also explains the faster and better charge transport of the Mo0.8W0.2S2-based device from a structural perspective which has great potential in the upcoming challenges on metal-semiconductor junction-based research domain.