光刺激发光
PSL公司
光存储
兴奋剂
材料科学
信息存储
荧光粉
光离子化
持续发光
发光
光电子学
光子
三维光学数据存储
计算机数据存储
纳米技术
光学
计算机科学
化学
离子
物理
计算机硬件
热释光
几何学
数学
有机化学
数据库
电离
作者
Feng Gao,Qing Pang,Dangli Gao,Chaoyang Jia,Hong Xin,Yong Pan,Yuhua Wang,Sining Yun
标识
DOI:10.1021/acsanm.2c05552
摘要
Photostimulable luminescence (PSL) nanophosphors, which exhibit superior features including controllable energy storage and efficient photon release upon light stimulation, are desirable for optical signal storage. However, trap tuning of the storage phosphor remains a great challenge. Herein, the PSL of Zn2GeO4:Mn2+ nanophosphors is enhanced via creating deep traps through nonequivalent Pr3+ doping. The possible enhanced mechanisms are analyzed combined with doping models using the first-principles theory. A mechanism is proposed based on changing the coordination environment of Mn2+, creating deep traps and tuning the band gap structure, and thus providing the chance for electrons' photoionization and PSL generation. As a result, the prepared nanophosphors demonstrate the superior functionalities for optical signal storage. This work not only offers an insight into defect engineering through doping strategies for developing PSL materials but also supplies a good candidate for optical information storage.
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