Thermal conductivity evaluation of ion irradiated Si3N4 and ZrN ceramics using spatial domain thermoreflectance

材料科学 辐照 热导率 氮化物 激光闪光分析 分析化学(期刊) 氮化硅 陶瓷 复合材料 光电子学 化学 物理 图层(电子) 色谱法 核物理学
作者
Adrien J. Terricabras,Joshua Ferrigno,Ling Wang,Marat Khafizov,Andrew Nelson,S.J. Zinkle
出处
期刊:Journal of Applied Physics [American Institute of Physics]
卷期号:132 (7) 被引量:4
标识
DOI:10.1063/5.0099175
摘要

Nitride ceramics have been investigated for different applications in the nuclear industry, such as space nuclear power, fusion reactor diagnostics and plasma heating, inert matrix fuels, and accident tolerant fuels. Although thermal conductivity remains one of the most important properties to track following irradiation, traditional techniques such as laser flash and xenon flash are limited to bulk sample characterization, which requires lengthy and cost-consuming neutron irradiation. This work used spatial domain thermoreflectance (SDTR) for the micrometer-scale measurement of thermal conductivity in 15 MeV Ni ion-irradiated silicon nitride and zirconium nitride from 1 to 50 dpa and 300 to 700 °C. The SDTR-measured unirradiated thermal conductivity was found to be consistent with the published data on bulk samples. Electrically conductive ZrN exhibits modest reduction after irradiation which is minimal at the highest irradiation temperatures. In electrically insulating Si3N4, the reduction is more significant and unlike ZrN, the reduction remains significant even at a higher irradiation temperature. The thermal resistance evolution following irradiation was compared with lattice swelling, which was determined using grazing incidence x-ray diffraction, and radiation-induced defects were observed using transmission electron microscopy. A saturation value was observed between 15 and 50 dpa for thermal conductivity degradation in both nitride ceramics and a direct correlation with high-temperature defect recombination was observed, as well as the potential presence of additional carrier scattering mechanisms.
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