Toward highly-robust MXene hybrid memristor by synergetic ionotronic modification and two-dimensional heterojunction

记忆电阻器 异质结 材料科学 纳米技术 光电子学 电子工程 工程类
作者
Songtao Ling,Shengran Lin,Yin‐Zhong Wu,Yang Li
出处
期刊:Chemical Engineering Journal [Elsevier BV]
卷期号:486: 150100-150100 被引量:11
标识
DOI:10.1016/j.cej.2024.150100
摘要

An organic–inorganic hybrid MXene-based memristor is demonstrated with synergetic ionotronic property. The cooperation of surface engineering through organic ionic dye of celestine blue and 2D sandwich heterojunction not only actuates the electronic transition of Ti 3 C 2 T x -MXene from metal-analogous conducting to semiconducting behavior, but also implements the remarkable cycling stability by the fine control of ionic migration. • Organic-inorganic hybrid MXene material was designed with synergetic ionotronic property. • The robust memristor based on this material was achieved by 2D sandwich heterojunction . • The mechanism was clearly clarified by theoretical analysis and experimental demonstration. MXene is an emerging two-dimensional (2D) nanomaterial composed of several atomic layers of transition metal carbide/nitride/carbonitride. Due to its metal-analogous conductivity and rich surface functional groups, the facile surface modification of MXene is promising for extending its functionality into semiconductors. However, the application of surface-modulated MXene in robust memristor devices remains rarely reported. Here, the organic dye of celestine blue with conjugated skeleton and ionic interaction is employed to modify MXene, which succeeds to serve as the switching element in memristor device with synergetic ionotronic (ionic–electronic) property. Moreover, the device affords highly-robust performance through rational 2D sandwich heterojunction design. The underlying mechanism is elaborately clarified by theoretical charge transport modelling and experimental scanning electron microscopy analysis. This study sheds light on the prospect of high-performance MXene-based memristors through ionotronic modification strategy and provides efficient guidelines for broadening the application of novel 2D nanomaterials in non-volatile memory.
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