Recent progress of innovative infrared avalanche photodetectors

Currently, the development trend of infrared detection systems is oriented towards achieving smaller size, reduced weight, lower power consumption, decreased cost, and heightened performance, collectively referred to as SWAP3. In this context, a rapid evolution is witnessed in the realm of next-generation high-sensitivity infrared avalanche photodiodes (APD). In recent years, the increasing demands for detector performance from astronomical, remote sensing, and civilian applications have presented novel challenges for the mechanistic exploration and device design of traditional avalanche photodetectors. This review explores the forefront of infrared APD technology, focusing on the remarkable progress achieved through the utilization of II-VI and III-V semiconductor families and the exploration based on novel low-dimensional materials. The review provides a detailed analysis of the unique properties and performance enhancements exhibited by APDs based on these material systems, shedding light on their potential for revolutionizing infrared sensing and imaging applications, and inspiring further innovation and exploration in the field of infrared photodetection.