Facile Synthesis and Characterization of PbS thin films doped with various Aluminum Concentrations for Photovoltaic Applications

Abstract In this study, aluminum doped lead sulfide (PbS:Al) thin films were deposited on soda lime glass substrates using chemical bath deposition (CBD) technique. The structural, morphological, optical and electrical properties of as-deposited PbS thin films were studied as a function of Al concentration (0, 2, 4, 6, 8 at. %). The deposited films can be analyzed using scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), x-ray diffraction (XRD), UV-Vis-NIR spectroscopy and Hall measurement. From SEM, it was evident that the thickness of the films decreased from 750 nm (0 at. %) to 280 nm (8 at. %) with increased Al concentration. XRD analysis revealed that the prepared films exhibited face centered cubic structure without any other binary phases. The average crystallite size of the films decreased from 33.71 to 20.45 nm. The direct optical band gap values were increased from 0.90 to 1.29 eV. The optical parameters such as refractive index ( n ), extinction coefficient ( k ), real ( ɛ 1 ) and imaginary ( ɛ 2 ) parts of the dielectric constant were 1.51–2.04, 0.0035–0.0075, 2.50–6.20 and 0.005–0.16 respectively. The absorption coefficient ( α ) of all the deposited films was in the range of ≈10 5 cm −1 . The electrical resistivity of the deposited films was found in the range of 10 2 –10 3 Ω·cm. The overall analysis indicate that the deposited PbS:Al thin film shows promise as an absorbing layer for heterojunction solar cell devices.