Effects of precursor concentration on the microstructural, optical and photoelectrochemical properties of Bi2O3 films synthesized by sol-gel method

材料科学 微晶 微观结构 介电谱 光电流 光致发光 分析化学(期刊) 薄膜 基质(水族馆) 扫描电子显微镜 溶胶凝胶 带隙 表面粗糙度 电化学 纳米技术 复合材料 光电子学 电极 冶金 化学 物理化学 地质学 海洋学 色谱法
作者
Hussein Baqiah,Zainal Abidin Talib,Josephine Ying Chyi Liew,Abdul Halim Shaari,Zulkarnain Zainal,M. F. Laimy
出处
期刊:Optik [Elsevier BV]
卷期号:206: 164303-164303 被引量:11
标识
DOI:10.1016/j.ijleo.2020.164303
摘要

β-Bi2O3 films were prepared by sol-gel method process from solutions with different precursor concentration (M = 0.05–0.20). The films were characterized by X-rays diffractions (XRD), field emission electron microscopy (FESEM), atomic force microscopy (AFM), UV–vis spectroscopy, photoluminescence spectroscopy (PL), photoelectrochemical (PEC) and electrochemical impedance measurements. The Bi2O3 deposited film had single phase β-Bi2O3 on ITO substrate while it exhibited mixed phases of ε-, δ- and β-Bi2O3 on glass substrate. By increasing M above 0.05, more XRD patterns were observed and lattice parameter c increased. Besides, crystallite size of films increased first from 19.2 to 26.4 nm at M = 0.05 – 0.15 and then decreased to 19.4 nm at M = 0.20. From AFM, the films consisted of polyhedron-like shape islands with height and distribution increased with increment of M. The surface roughness increased from 10.3 to 18.5 nm for film with M = 0.05 and 0.15, respectively, and then decreased to 14.8 nm for film M = 0.20. Optical band gap decreased from 3.24 eV for film M = 0.05 to 2.89 eV for film M = 0.20. From PEC, photocurrent of films increased with increment of M and had maximum value 3.8 × 10−4 A/cm2 for film M = 0.20 at 0 V versus Ag/AgCl. Electrochemical impedance analysis showed a gradual reduction of charge transfer resistance with increasing M. Finally, β-Bi2O3 films with tailored microstructure were prepared which make it attractive for many applications.
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