光电二极管
光电子学
材料科学
量子效率
暗电流
红外线的
量子点
光电探测器
物理
光学
作者
Epimitheas Georgitzikis,Paweł E. Malinowski,Yunlong Li,Jorick Maes,Luis Moreno Hagelsieb,Stefano Guerrieri,Zeger Hens,Paul Heremans,David Cheyns
出处
期刊:IEEE Sensors Journal
[Institute of Electrical and Electronics Engineers]
日期:2020-07-01
卷期号:20 (13): 6841-6848
被引量:50
标识
DOI:10.1109/jsen.2019.2933741
摘要
Colloidal quantum dots based on lead sulfide (PbS) are very attractive materials for the realization of novel image sensors.They offer low cost synthesis, compatibility with a variety of substrates and processing on large area.The tunable band gap enables selective light detection from the visible wavelengths up to the short-waveinfrared (SWIR).This work describes the roadmap towards the integration of quantum dot photodiodes (QDPD) on top of a Si based CMOS read-out circuit.Photodiodes using an n-p junction architecture are fabricated on Si substrates, showing a dark current of 30 nA/cm 2 at -1 V reverse bias, EQE above 20% and specific detectivity above 10 12 cm Hz 1/2 W -1 at the wavelength of 940 nm.Efficiency is improved by reducing absorption in the top contact through optical design.Furthermore, photolithographic patterning of the thin-film stack is introduced for the first time, showing the feasibility of pixel pitches down to 40 μm, opening the way towards high resolution monolithic infrared imagers and the incorporation of infrared and visible sensitive pixels side by side.
科研通智能强力驱动
Strongly Powered by AbleSci AI