锗
蚀刻(微加工)
硅
半导体
材料科学
工程物理
光电子学
电解质
纳米技术
工程类
化学
物理化学
电极
图层(电子)
标识
DOI:10.1002/j.1538-7305.1956.tb02385.x
摘要
Properties of electrolyte-semiconductor barriers are described, with emphasis on germanium. The use of these barriers in localizing electrolytic etching is discussed. Other localization techniques are mentioned. Electrolytes for etching germanium and silicon are given.
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