方向错误
位错
结晶学
材料科学
纳米晶
纳米晶材料
螺旋(铁路)
凝聚态物理
化学物理
部分位错
纳米技术
化学
微观结构
复合材料
晶界
物理
数学分析
数学
作者
R. Lee Penn,Jillian F. Banfield
出处
期刊:Science
[American Association for the Advancement of Science (AAAS)]
日期:1998-08-14
卷期号:281 (5379): 969-971
被引量:2286
标识
DOI:10.1126/science.281.5379.969
摘要
Dislocations are common defects in solids, yet all crystals begin as dislocation-free nuclei. The mechanisms by which dislocations form during early growth are poorly understood. When nanocrystalline materials grow by oriented attachment at crystallographically specific surfaces and there is a small misorientation at the interface, dislocations result. Spiral growth at two or more closely spaced screw dislocations provides a mechanism for generating complex polytypic and polymorphic structures. These results are of fundamental importance to understanding crystal growth.
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