拉曼光谱
正交晶系
凝聚态物理
相变
拓扑序
拓扑绝缘体
离域电子
声子
价(化学)
黑磷
三角晶系
材料科学
拓扑(电路)
化学
物理
结晶学
晶体结构
量子力学
量子
组合数学
光电子学
数学
作者
Satyendra Nath Gupta,Anjali Singh,Koushik Pal,Biswanath Chakraborti,D. V. S. Muthu,Umesh V. Waghmare,A. K. Sood
出处
期刊:Physical review
日期:2017-09-06
卷期号:96 (9)
被引量:37
标识
DOI:10.1103/physrevb.96.094104
摘要
We report high pressure Raman experiments of Black phosphorus up to 24 GPa. The line widths of first order Raman modes A$^1_g$, B$_{2g}$ and A$^2_g$ of the orthorhombic phase show a minimum at 1.1 GPa. Our first-principles density functional analysis reveals that this is associated with the anomalies in electron-phonon coupling at the semiconductor to topological insulator transition through inversion of valence and conduction bands marking a change from trivial to nontrivial electronic topology. The frequencies of B$_{2g}$ and A$^2_g$ modes become anomalous in the rhombohedral phase at 7.4 GPa, and new modes appearing in the rhombohedral phase show anomalous softening with pressure. This is shown to originate from unusual structural evolution of black phosphorous with pressure, based on first-principles theoretical analysis.
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