Dual-gate β-Ga2O3 nanomembrane transistors: device operation and analytical modelling

The physical operation and performance of a dual gate β-gallium oxide nanomembrane field effect transistor (NM-FET) with asymmetric top and back gate oxide thicknesses are investigated for different modes of operation. A physics-based device simulator calibrated with experimental data is used for this purpose. Normally-OFF operation of the NM-FET is demonstrated by electrically tuning the top gate threshold voltage with the applied back gate bias. In addition, analytical models of threshold voltage for all the different modes of operation are presented and the proposed models are rigorously validated with simulation results and experimental data. The effect of individual device parameters on the threshold voltage of the normally-OFF NM-FET is further investigated using the analytical model.