GSM演进的增强数据速率
电子能带结构
密度泛函理论
带隙
钻石
半导体
职位(财务)
电子结构
电子波段
混合功能
凝聚态物理
材料科学
计算物理学
计算机科学
物理
光电子学
量子力学
电信
复合材料
经济
财务
标识
DOI:10.1021/acs.jpca.1c06763
摘要
Accurate calculation of the electronic band structure is essential to material screening and design. Hybrid density functional has been recently widely used to describe the electronic structure of semiconductors; however, it is difficult to locate the band edge positions of indirect band gap materials due to heavy computational cost especially when the band edges are not located at special k-points. We suggest how to investigate three-dimensional band structure efficiently with hybrid density functionals and to find the band edge positions. The band edge position of diamond Si, SbSI, and MoS2 are investigated using the proposed method.
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