Fabrication and simulation of 1540-nm transmission by 532-nm excitation in photonic crystal of Er:ZnO film

Abstract Erbium (Er)-doped ZnO thin film is fabricated on sapphire substrate by radio frequency magnetron sputtering technology. The as-deposited Er:ZnO film has a good film quality and exhibits excellent single-mode waveguide characteristic. A photonic crystal structure in the Er:ZnO film is fabricated by focused-ion-beam etching. When the film is stimulated by a 532 nm laser, photoluminescence (PL) at 1540 nm can be excited. Simulation results show that the propagation of Er-related emission of 1540 nm will be well restricted along a certain direction in the photonic crystal structure. It provides a novel way to control and confine the transmission of light in ZnO waveguide and will be applicable for the application of Er:ZnO photonic devices.