薄膜晶体管
材料科学
光电子学
晶体管
电压
电气工程
电流(流体)
基质(水族馆)
阈值电压
阈下传导
噪声裕度
电子线路
频道(广播)
纳米技术
图层(电子)
工程类
地质学
海洋学
作者
Ute Zschieschang,Vera P. Bader,Hagen Klauk
标识
DOI:10.1016/j.orgel.2017.06.045
摘要
In many of the applications envisioned for organic thin-film transistors (TFTs), the electrical power will be supplied by small batteries or energy harvesters, which implies that it will be beneficial if the TFTs can be operated with voltages of 1 V or even below 1 V. At the same time, the TFTs should have large on/off current ratios, especially for applications in digital circuits and active matrices. Here we demonstrate p-channel and n-channel organic TFTs fabricated on a flexible plastic substrate that have a turn-on voltage of exactly 0 V, a subthreshold slope of 100 mV/decade, and an on/off current ratio of 2 × 105 when operated with gate-source voltages between 0 and 0.7 V. Complementary inverters fabricated using these TFTs have a small-signal gain of 90 and a minimum noise margin of 79% at a supply voltage of 0.7 V. Complementary ring oscillators can be operated with supply voltages as small as 0.4 V.
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