材料科学
带隙
钙钛矿(结构)
钝化
晶界
能量转换效率
开路电压
结晶
相(物质)
粒度
光电子学
光伏系统
化学工程
纳米技术
电压
微观结构
复合材料
电气工程
化学
有机化学
工程类
图层(电子)
作者
Yang Zhou,Yongheng Jia,Hong‐Hua Fang,Maria Antonietta Loi,Fangyan Xie,Li Gong,Minchao Qin,Xinhui Lu,Ching‐Ping Wong,Ni Zhao
标识
DOI:10.1002/adfm.201803130
摘要
Abstract Wide bandgap (WB) organic–inorganic hybrid perovskites (OIHPs) with a bandgap ranging between 1.7 and 2.0 eV have shown great potential to improve the efficiency of single‐junction silicon or thin‐film solar cells by forming a tandem structure with one of these cells or with a narrow bandgap perovskite cell. However, WB‐OIHPs suffer from a large open‐circuit voltage ( V oc ) deficit in photovoltaic devices, which is associated with the phase segregation of the materials under light illumination. In this work the photoinstability is demonstrated and V oc loss can be addressed by combining grain crystallization and grain boundary passivation, achieved simultaneously through tuning of perovskite precursor composition. Using FA 0.17 Cs 0.83 PbI 3– x Br x ( x = 0.8, 1.2 1.5, and 1.8), with a varied bandgap from 1.72 to 1.93 eV, as the model system it is illustrated how precursor additive Pb(SCN) 2 should be matched with a proper ratio of FAX (I and Br) to realize large grains with defect‐healed grain boundaries. The optimized WB‐OIHPs show good photostability at both room‐temperature and elevated temperature. Moreover, the corresponding solar cells exhibit excellent photovoltaic performances with the champion V oc /stabilized power output efficiency reaching 1.244 V/18.60%, 1.284 V/16.51%, 1.296 V/15.01%, and 1.312 V/14.35% for WB‐OIHPs with x = 0.8, 1.2, 1.5, and 1.8, respectively.
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