P‐18: Improvement of Reliability in Coplanar a‐IGZO TFTs by Multilayer SiO2 Gate Insulator

We investigated the PBTS instability of top‐gate self‐aligned coplanar a‐IGZO TFTs with multilayer SiO 2 GI. It is confirmed that the PBTS instability due to the deep charge trapping in GI bulk can be improved by increasing activation energy through the interfacial formation with hydrogen‐low SiO 2 deposition, and it is demonstrated experimentally that the PBTS instability due to the excess oxygen in the active region can be improved by hydrogen diffusion process through sequential hydrogen‐rich SiO 2 deposition after ACT/GI interface formation.