Strain Modulation for Light‐Stable n–i–p Perovskite/Silicon Tandem Solar Cells

Perovskite/silicon tandem solar cells are promising to penetrate photovoltaic market. However, the wide-bandgap perovskite absorbers used in top-cell often suffer severe phase segregation under illumination, which restricts the operation lifetime of tandem solar cells. Here, a strain modulation strategy to fabricate light-stable perovskite/silicon tandem solar cells is reported. By employing adenosine triphosphate, the residual tensile strain in the wide-bandgap perovskite absorber is successfully converted to compressive strain, which mitigates light-induced ion migration and phase segregation. Based on the wide-bandgap perovskite with compressive strain, single-junction solar cells with the n-i-p layout yield a power conversion efficiency (PCE) of 20.53% with the smallest voltage deficits of 440 mV. These cells also maintain 83.60% of initial PCE after 2500 h operation at the maximum power point. Finally, these top cells are integrated with silicon bottom cells in a monolithic tandem device, which achieves a PCE of 26.95% and improved light stability at open-circuit.