过电位
空位缺陷
电催化剂
无定形固体
半金属
材料科学
惰性
化学物理
分解水
氢
密度泛函理论
催化作用
电极
纳米技术
凝聚态物理
光电子学
带隙
化学
计算化学
物理化学
电化学
结晶学
光催化
物理
生物化学
有机化学
作者
Guowei Li,Chenguang Fu,Jiquan Wu,Jiancun Rao,Sz‐Chian Liou,Xijin Xu,Baiqi Shao,Kai Liu,Enke Liu,Nitesh Kumar,Xianjie Liu,Mats Fahlman,Johannes Gooth,Gudrun Auffermann,Yan Sun,Claudia Felser,Baomin Zhang
标识
DOI:10.1016/j.apcatb.2019.04.080
摘要
The presence of elemental vacancies in materials are inevitable according to statistical thermodynamics, which will decide the chemical and physical properties of the investigated system. However, the controlled manipulation of vacancies for specific applications is a challenge. Here we report a facile method for creating large concentrations of S vacancies in the inert basal plane of MoS2 supported on semimetal CoMoP2. With a small applied potential, S atoms can be removed in the form of H2S due to the optimized free energy of formation. The existence of vacancies favors electron injection from the electrode to the active site by decreasing the contact resistance. As a consequence, the catalytic current is increased by 221% with the vacancy-rich MoS2 as electrocatalyst for hydrogen evolution reaction (HER). A small overpotential of 75 mV is needed to deliver a current density of 10 mA cm−2, which is considered among the best values achieved for MoS2. It is envisaged that this work may provide a new strategy for utilizing the semimetal phase for structuring MoS2 into a multi-functional material.
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