Phonon transport and thermoelectric properties of semiconducting Bi2Te2X (X = S, Se, Te) monolayers

玻尔兹曼方程 热电效应 热导率 声子 塞贝克系数 凝聚态物理 非谐性 声子散射 材料科学 散射 热电材料 物理 热力学 光学 复合材料
作者
Zahid Rashid,Arun S. Nissimagoudar,Wu Li
出处
期刊:Physical Chemistry Chemical Physics [The Royal Society of Chemistry]
卷期号:21 (10): 5679-5688 被引量:66
标识
DOI:10.1039/c8cp05793a
摘要

Confinement or dimensionality reduction is a novel strategy to reduce the lattice thermal conductivity and, consequently, to improve the thermoelectric conversion performance. Bismuth and tellurium based low-dimensional materials have great potential in this regard. The phonon transport and thermoelectric properties of Bi2Te2X (X = S, Se, Te) monolayers are systematically investigated by employing density functional theory and the Boltzmann transport equation. The calculated lattice thermal conductivity of these 2D systems ranges from ∼1.3 W m-1 K-1 (Bi2Te2Se) to ∼1.5 W m-1 K-1 (Bi2Te3) for a 10 μm system size at room temperature and considering spin-orbit coupling in harmonic force constants. This remarkably low lattice thermal conductivity is attributed to small group velocities and enhanced anharmonic phonon scattering rates. A detailed analysis is presented in terms of mode-level phonon group velocities, anharmonic scattering rates and phonon mean free paths. Our results reveal that the thermal transport in these 2D systems is dominated by in-plane transverse acoustic modes. Additionally, the thermal conductivity can be further reduced by decreasing the sample size due to phonon-boundary scattering. The thermoelectric properties including the Seebeck coefficient, power factor and electrical conductivity are calculated using the semi-classical Boltzmann transport equation within the rigid band approximation. The low thermal conductivities coupled with their high carrier mobilities lead to good thermoelectric power factors. With optimal carrier doping, a figure of merit ∼0.6 can be achieved at room temperature, which increases to ∼0.8 at 700 K, thus making them promising candidates for thermoelectric applications.
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