Chemically grown Bi2S3 nanorod films for hydrogen evolution

Bi 2 S 3 nanorod films were grown on ITO-coated glass substrates through chemical bath deposition (CBD) and annealing in a sulfur atmosphere. The as-deposited films were amorphous/nanocrystalline, with a particle size of 20 nm and a direct optical band gap of 1.87 eV. Upon annealing at 350 °C, the films exhibited a nanorod morphology with a length of 300 nm. Further increasing the temperature from 400 to 450 °C resulted in an increased diameter of nanorods. The direct optical band gap decreased from 1.68 to 1.47 eV upon increasing the annealing temperature from 350 to 400 °C. Photoelectrochemical (PEC) measurements showed that the nanorod films grown on ITO-coated glass substrates exhibited significantly increased PEC activity owing to their nanorod structures. The Bi 2 S 3 nanorod films formed at 400 °C exhibited a maximum photocurrent density of 6.1 mA/cm 2 at 1 V, which was 2.5 times higher than that of the as-deposited films. The enhancement in the photocurrent density could be due to the effective visible-light absorption of Bi 2 S 3 nanorods as a result of the increased crystallinity and decreased band gap. This study demonstrates the synthesis route involving a simple and inexpensive CBD method of Bi 2 S 3 nanorod films for the optimized PEC water-splitting applications. • Growth of Bi 2 S 3 nanorod films on ITO-coated substrates by CBD and annealing. • Effect of annealing temperature on Bi 2 S 3 nanorod formation was investigated. • The bandgap of Bi 2 S 3 decreased from 1.68 to 1.47 eV upon increasing annealing temperature. • The prepared Bi 2 S 3 nanorod films exhibited significant increase in the PEC activity. • Bi 2 S 3 nanorod films formed at 400 °C exhibited a maximum photocurrent density of 6.1 mA/cm 2 at 1 V vs. Hg/HgO.