Implementing (K,Na)NbO3-based lead-free ferroelectric films to piezoelectric micromachined ultrasonic transducers

材料科学 压电 铁电性 超声波传感器 传感器 铅(地质) PMUT公司 电容式微机械超声换能器 声学 光电子学 复合材料 电介质 地貌学 物理 地质学
作者
Yu Huang,Liang Shu,Fade Hu,Lisha Liu,Zhen Zhou,Yue‐Yu‐Shan Cheng,Suwei Zhang,Wei Li,Qian Li,Hongliang Wang,Zhinan Dong,Liyu Wei,Chuan Luo,Jing‐Feng Li
出处
期刊:Nano Energy [Elsevier BV]
卷期号:103: 107761-107761 被引量:18
标识
DOI:10.1016/j.nanoen.2022.107761
摘要

Piezoelectric micromachined ultrasonic transducers (pMUTs) have attracted widespread attentions on account of their vital applications in medical imaging, fingerprint identification, range-finding, gesture recognition, and so on . The piezoelectric layer, which is the key component for pMUTs, has been dominated by ferroelectric Pb(Zr,Ti)O 3 (PZT) because of its outstanding piezoelectric performance, especially in the case of pMUT transmitters. However, the toxicity of lead restricts their medical-related applications, so developing lead-free pMUTs should be of great significance but remains challenging. As a precedent, the present work pioneered the processing of lead-free (K,Na)NbO 3 (KNN)-based pMUTs, and obtained an ultrahigh transmitting sensitivity of 1250 nm V -1 at 66.2 kHz, which is superior to the majority of PZT-based pMUTs reported so far. The excellent displacement sensitivity can be ascribed to the dense and homogeneous feature, (100)-textured structure, orthorhombic-tetragonal phase coexistence, nanosized domains, great electrical insulation and high piezoresponse of the KNN-based film as well as the the elaborate micromachining process. This work initiated a successful precedent for applying lead-free ferroelectric films to pMUTs also as a breakthrough step in promoting KNN-based films toward practical applications. • Lead-free ferroelectric film has been first integrated into piezoelectric micromachined ultrasonic transducers. • An ultrahigh transmitting sensitivity up to 1250 nm V -1 can be achieved in KNN-based pMUTs, being comparable to Pb-based ones. • The high-performance origin of the KNN-based pMUTs is discussed from the aspects of film properties and device designs.
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