钝化
发光二极管
光电子学
材料科学
量子效率
退火(玻璃)
化学气相沉积
图层(电子)
纳米技术
冶金
作者
Matthew S. Wong,Ryan C. White,Stephen H. Gee,Tanay Tak,Srinivas Gandrothula,Hyoshik Choi,Shuji Nakamura,James S. Speck,Steven P. DenBaars
标识
DOI:10.35848/1882-0786/acdf3c
摘要
Abstract A sidewall treatment process is proposed to recover the external quantum efficiency (EQE) loss in AlGaInP micro-LEDs ( μ LEDs). The proposed sidewall treatment consists of thermal annealing, ammonium sulfide chemical treatment, and sidewall passivation using atomic-layer deposition (ALD). The devices with sidewall treatment show improved optical power of more than 500% and 190% at 5 and 100 A cm −2 , respectively, compared to devices with ALD sidewall passivation. The reduction in EQE was 20% when shrinking the device dimensions from 100 × 100 to 20 × 20 μ m 2 . This work reveals that AlGaInP μ LEDs can be energy efficient by employing proper sidewall treatments.
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