材料科学
光子学
光电子学
等离子体子
神经形态工程学
硫系化合物
计算机数据存储
计算机科学
光学
计算机硬件
人工神经网络
物理
机器学习
作者
Xu Yan,Binbin Chen,Yegang Lü
标识
DOI:10.1016/j.optlastec.2023.110239
摘要
The combination of photonic devices and chalcogenide phase change materials (PCMs) provides a potential solution for photonic storage and computing. However, there are still some issues that need to be addressed for currently integrated phase-change photonic memory such as low speed, high energy consumption, and large footprint. To enable stronger interaction between light and PCMs, we utilize the plasmonic enhancement effect to amplify the local electric field, resulting in high energy efficiency in photonic storage and computation. This work proposes a nanoscale elliptical plasmonic nanoantenna that dramatically improves switching speed and energy by placing an Ag elliptical ring wrapped with Ge2Sb2Te5 (GST) on a silicon waveguide. The device exhibits crystalline and amorphous states with insertion losses of 0.3 dB and 1.7 dB, respectively, at a wavelength of 1550 nm. Write and erase operations can be completed by optical pulses of 1.5 ns–1 mW and 3 ns–3 mW, respectively. An ultra-small device volume of only 4.465 × 10−4 (µm3) is capable of achieving a switching contrast ratio of 28.5 %. Moreover, the non-volatile storage of multi-level intermediate states facilitates a wide weight-variation range and allows for precise weight updates, enhancing the overall performance and accuracy of the system. In the handwritten digit recognition task of the three-layer perceptron, the device demonstrates a recognition accuracy rate of 95 %, indicating that our approach can enable a more efficient neuromorphic photonic computing network.
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