Suboxide vapor phase epitaxy for growth of high-purity gallium oxide

Abstract We propose using gallium suboxide, Ga 2 O, as a Ga source for the growth of high-purity Ga 2 O 3 by vapor phase epitaxy. It is shown in a thermochemical analysis that the suboxide can be generated effectively in the reaction between Ga 2 O 3 and Ga and subsequently be utilized for the epitaxial growth of Ga 2 O 3 . A demonstration of Ga 2 O 3 crystal growth was carried out on β -Ga 2 O 3 (001) substrates with Ga 2 O and O 2 used as the gaseous precursors, resulting in high-purity epitaxial layers. No possible donor impurities from the sources or growth environment, such as Si or Sn, were detected in the grown layers.