Electric field controlled valley-polarized photocurrent switch based on the circular bulk photovoltaic effect

Efficient electric manipulation of valley degrees of freedom is critical and challenging for the advancement of valley-based information science and technology. We put forth an electrical scheme, based on a two-band Dirac model, that can switch the fully valley-polarized photocurrent between $K$ and ${K}^{\ensuremath{'}}$ valleys using the circular bulk electro-photovoltaic effect. This is accomplished by applying an out-of-plane electric field to the two-dimensional valley materials, which enables continuous tuning of the Berry curvature and its sign flip. We found that the switch of the fully valley-polarized photocurrent is directly tied to the sign change of Berry curvature, which accompanies a topological phase transition, for instance, the quantum spin Hall effect and the quantum valley Hall effect. This scheme has been confirmed in monolayer ${\mathrm{BiAsI}}_{2}$ and germanene through first-principles calculations. Our paper offers a promising strategy for the development of a volatile valley-addressable memory device and could inspire further research in this area.