旋转(数学)
伺服
控制(管理)
材料科学
计算机科学
人工智能
作者
Yuexing Chen,Xiao‐Lei Shi,Junze Zhang,Mohammad Nisar,Zhong-Zhao Zha,Zi-Nan Zhong,Fu Li,Guangxing Liang,Jingting Luo,Meng Li,Tianyi Cao,Wei‐Di Liu,Dongyan Xu,Zhuanghao Zheng,Zhi‐Gang Chen
标识
DOI:10.1038/s41467-024-52680-0
摘要
Ag2Se shows significant potential for near-room-temperature thermoelectric applications, but its performance and device design are still evolving. In this work, we design a novel flexible Ag2Se thin-film-based thermoelectric device with optimized electrode materials and structure, achieving a high output power density of over 65 W m-2 and a normalized power density up to 3.68 μW cm-2 K-2 at a temperature difference of 42 K. By fine-tuning vapor selenization time, we strengthen the (013) orientation and carrier mobility of Ag2Se films, reducing excessive Ag interstitials and achieving a power factor of over 29 μW cm-1 K-2 at 393 K. A protective layer boosts flexibility of the thin film, retaining 90% performance after 1000 bends at 60°. Coupled with p-type Sb2Te3 thin films and rational simulations, the device shows rapid human motion response and precise servo motor control, highlighting the potential of high-performance Ag2Se thin films in advanced applications.
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