Recent progress in synthesis, growth mechanisms, and electromagnetic wave absorption properties of silicon carbide nanowires

With the research and development of nanomaterials, one-dimensional (1D) nanowire structures have received a lot of attention due to their unique physical and chemical properties. Among them, silicon carbide nanowires (SiC NWs) have low density, excellent oxidation resistance, dielectric properties, and electromagnetic (EM) wave absorption properties, which can well meet the development needs of civilian equipment and military weaponry. SiC NWs have outstanding research and application potential in the field of EM wave absorption. However, comprehensive summaries of SiC NWs have not been available so far. Based on this, this paper reviews the research progress of SiC NWs microwave absorbing materials, various micro-morphologies of SiC NWs are introduced in detail, as well as diverse preparation strategies and multiple growth mechanisms are also stated. Ultimately, recent advances in research progress of SiC NWs and their composites in EM wave absorption are elaborated, along with the future research directions of SiC NWs in the field of EM wave absorption.