溅射
退火(玻璃)
电阻率和电导率
材料科学
基质(水族馆)
微观结构
溅射沉积
分析化学(期刊)
图层(电子)
薄膜
冶金
复合材料
化学
纳米技术
海洋学
工程类
色谱法
地质学
电气工程
作者
T. Nagano,Kazuya Inokuchi,Kunihiro Tamahashi,Nobuhiro Ishikawa,Yasushi Sasajima,Jin Onuki
标识
DOI:10.1016/j.tsf.2011.07.046
摘要
Microstructures and resistivities of sputtered Ru films were investigated as a function of substrate temperature to obtain a single-layered Ru barrier without a Ta/TaN under layer. High resistivity Ru films with a high density of crevices, which enhances Cu diffusion along the crevices, were formed by the conventional sputtering process, i.e., sputtering at room temperature and annealing at 400 °C–700 °C for 30 min in Ar + 3%H2. But, crevice-free and smooth Ru films with low resistivity, the same as that for the bulk phase, were formed when substrate temperature add sputtering was raised to 700 °C. Ru films formed by this process had (002) preferred orientation and then Cu (111) was formed by plating. This result corresponded to the tendency predicted by ab initio calculations.
科研通智能强力驱动
Strongly Powered by AbleSci AI