Aurivillius Halide Perovskite: A New Family of Two-Dimensional Materials for Optoelectronic Applications

奥里维里斯 钙钛矿(结构) 材料科学 带隙 密度泛函理论 凝聚态物理 卤化物 光电子学 电子结构 八面体 结晶学 计算化学 铁电性 化学 晶体结构 无机化学 物理 电介质
作者
Shuai Zhao,Chunfeng Lan,Huanhuan Li,Chu Zhang,Tingli Ma
出处
期刊:Journal of Physical Chemistry C [American Chemical Society]
卷期号:124 (3): 1788-1793 被引量:16
标识
DOI:10.1021/acs.jpcc.9b08450
摘要

Layered perovskites have attracted considerable attention in optoelectronic applications because of their excellent electronic properties and stability. In this work, the quasi-2D Aurivillius halide perovskites are investigated using density functional theory. The single-layer Aurivillius perovskite Ba2PbI6 is predicted to have a direct band gap of 1.89 eV, which is close to that of the Ruddlesden–Popper perovskite Cs2PbI4. The electronic structures near the Fermi level are mainly governed by the [PbX6] octahedra, which leads to electronic properties similar to that of Cs2PbI4. Decomposition energies reveal that these Aurivillius perovskites exhibit thermal instability. However, increasing the number of the [PbX6] octahedra layer can enhance the stability and reduce the band gap. Our results indicated that for n ≥ 5, it is possible to synthesize the thermally stable Cl-based Aurivillius perovskite Ba2Csn-1PbnCl3n+3. Bi- and In-based Aurivillius perovskites are also calculated to evaluate the Pb-free alternatives. These calculations can serve as a theoretical support in exploring novel layered perovskites for optoelectronic applications.
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