Broadband high quantum efficiency InGaAs/InP focal plane arrays via high precision plasma thinning

We report on the fabrication of a 160×120 visible (Vis)-extended InGaAs/InP focal plane array (FPA) by means of the inductively coupled plasma etching. Compared to the conventional Vis-InGaAs FPAs, higher quantum efficiency in the Vis spectrum has been achieved. High precision thinning of the n-type InP contact layer down to 10 nm has led to quantum efficiencies higher than 60% over a broad wavelength range of 500–1700 nm. Benefiting from the textured surface after plasma etching, 17% lower reflectance over the entire response range was also found. Enhanced Vis/near-infrared (NIR) laboratory imaging capability has also been demonstrated, which has proved the feasibility of such processes for fabrication of future higher definition Vis/NIR InGaAs imagers.