硅氧烷
材料科学
钝化
量子点
化学工程
复合材料
纳米技术
聚合物
图层(电子)
工程类
作者
Hwea Yoon Kim,Da-Eun Yoon,Junho Jang,Gwang‐Mun Choi,Dongkyu Lee,Byung Seong Bae
摘要
We report on the effect of linkage between quantum dot (QD) and siloxane matrix by preparing two different QD/siloxane films. One has chemical linkages between QD and siloxane matrix, and the other has no chemical linkages between QD and siloxane matrix. The QD/siloxane (methacryl) film, which has the chemical linkages, exhibits no degradation of photoluminescence (PL) quantum yield (QY) under heat or moisture condition for over 1 month, while the QD/siloxane (epoxy) film, which has no linkages, shows drastic decreased of PL QY. The chemical linkages between QD and siloxane matrix that makes effective siloxane passivation layer intact on the surface of QDs in QD/siloxane (methacryl) film. Given its exceptional stability with the help of linkages between QD and siloxane matrix, we expect that the QD/siloxane (methacryl) film is best fitted in PL-type down-conversion layer for display applications.
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