薄膜晶体管
存水弯(水管)
电流(流体)
无定形固体
光电子学
材料科学
晶体管
工程物理
电气工程
电子工程
纳米技术
物理
工程类
化学
电压
结晶学
气象学
图层(电子)
作者
Hongyu He,Yuan Liu,Bo Yan,Xinnan Lin,Xueren Zheng,Shengdong Zhang
标识
DOI:10.1109/ted.2017.2721436
摘要
Surface-potential-based drain current model is presented for amorphous InGaZnO thin-film transistors considering both exponential deep and tail trap states densities in the energy gap. The trap states densities are determined by the numerical calculation on the basis of the assumption that the trapped carrier concentration is much higher than the free carrier concentration. The analytical drain current model is developed consistent with the numerical calculation, and verified by the experimental data at different temperatures.
科研通智能强力驱动
Strongly Powered by AbleSci AI