Luminescent Property of Al<sub>2</sub>O<sub>3</sub>:Ce<sup>3+</sup> Thin Films

The Al 2 O 3 films doped with Ce 3 + were deposited on slides by the medium-frequency reaction magnetron sputtering process, to which the power is constant, Ar flow rate 70 sccm, O 2 flow rate 25~45sccm and sputtering time 90min at room temperature. The relationship between the luminescent properties of Al 2 O 3 :Ce 3 + films and the doped amount of Ce 3 + in the films was studied. The presence of Ce 3 + and stoichiometry of those films were determined. It was observed that the total luminescence intensity increases and the peak positions are strongly dependent on Ce 3+ concentration in the films. The analysis of luminescent excitation spectra showed that the luminance is due to the Ce 3+ concentration in the cerium chloride aggregate formed in the films.