假象
石墨
碳化硅
材料科学
碳化物
硅
格子(音乐)
结晶学
X射线
衍射
复合材料
冶金
化学
光学
物理
石英
声学
出处
期刊:Carbon
[Elsevier]
日期:1965-07-01
卷期号:3 (1): 53-57
被引量:90
标识
DOI:10.1016/0008-6223(65)90027-8
摘要
The structural changes which occur when single crystals of α silicon carbide (6H) are heated in vacuo, have been studied by using X-ray diffraction methods. The crystals were heated in an induction furnace for an hour to ~2280°C. This resulted in the formation of pseudomorphs which retained the morphology of the original SiC crystals but had a complicated structure which was made up of various stages in the development of a graphite lattice. A definite relation was found between the lattice of SiC and the structure of the resultant pseudomorph. The complex nature of the matrix is described and a possible mechanism of decomposition is suggested.
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