佩尔斯跃迁
凝聚态物理
合并(版本控制)
材料科学
金属-绝缘体过渡
带隙
金属
绝缘体(电)
格子(音乐)
费米能级
物理
电子
光电子学
计算机科学
声学
冶金
情报检索
量子力学
作者
Joung Real Ahn,J. H. Byun,H. Koh,Eli Rotenberg,S. D. Kevan,Han Woong Yeom
标识
DOI:10.1103/physrevlett.93.106401
摘要
One dimensional (1D) metals are unstable at low temperature undergoing a metal-insulator transition coupled with a periodic lattice distortion, a Peierls transition. Angle-resolved photoemission study for the 1D metallic chains of In on Si(111), featuring a metal-insulator transition and triple metallic bands, clarifies in detail how the multiple band gaps are formed at low temperature. In addition to the gap opening for a half-filled ideal 1D band with a proper Fermi surface nesting, two other quasi-1D metallic bands are found to merge into a single band, opening a unique but $k$-dependent energy gap through an interband charge transfer. This result introduces a novel gap-opening mechanism for a multiband Peierls system where the interband interaction is important.
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