薄膜晶体管
材料科学
栅极电介质
光电子学
无定形固体
电介质
阈值电压
晶体管
栅氧化层
电气工程
电压
纳米技术
化学
图层(电子)
结晶学
工程类
作者
Jim-Long Her,Tung-Ming Pan,Jiang-Hung Liu,Hongjun Wang,Ching-Hung Chen,Keiichi Koyama
标识
DOI:10.1016/j.tsf.2014.08.021
摘要
In this article, we studied the structural properties and electrical characteristics of GdTiO3 gate dielectric for amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistor (TFT) applications. The a-IGZO TFT device featuring the GdTiO3 gate dielectric exhibited better electrical characteristics, including a small threshold voltage of 0.14 V, a large field-effect mobility of 32.3 cm2/V-s, a high Ion/Ioff current ratio of 4.2 × 108, and a low subthreshold swing of 213 mV/decade. Furthermore, the electrical instability of GdTiO3 a-IGZO TFTs was investigated under both positive gate-bias stress (PGBS) and negative gate-bias stress (NGBS) conditions. The electron charge trapping in the gate dielectric dominates the PGBS degradation, while the oxygen vacancies control the NGBS degradation.
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